FW344A Datasheet, PDF (1/9 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Ordering number : EN8998C
FW344A
Power MOSFET
30V, 4.5A, 64mΩ, ^{–30V, –3.5A,} 102mΩ, Complementary Dual SOIC8
http://onsemi.com
Features
• _{ON-resistance Nch : RDS(on)1=49mΩ(typ.)}
Pch : RDS(on)1=78mΩ(typ.)
• _{4V drive}
• _{Halogen free compliance}
• _{Nch+Pch MOSFET}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (2000mm²Ã—0.8mm)
30
±20
4.5
5
18
1.4
1.7
150
--30
V
±20
V
--3.5
A
--4
A
--14
A
W
W
°C
Tstg
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
8
5
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
0.22
FW344A-TL-2W
Packing Type : TL
Marking
1
1.27
4
0.445 ^{0.254 (GAGE PLANE)}
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
TL
Electrical Connection
8
7
6
5
FW344
A ^{LOT No.}
Semiconductor Components Industries, LLC, 2013
July, 2013
1
2
3
4
91212 TKIM/62712 TKIM/31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/9