FW297 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET

FW297
Power MOSFET
60V, 58mΩ, 4.5A, Dual N-Channel
www.onsemi.com
Features
• Low On-Resistance
• 4.0V Drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(2000mm² × 0.8mm) 1 unit, PW≤10s
Total Dissipation
When mounted on ceramic substrate
PT
(2000mm² × 0.8mm) , PW≤10s
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
60
V
±20
V
4.5
A
18
A
1.8
W
2.2
W
150
°C
−55 to +150
°C
Thermal Resistance Ratings
Parameter
Symbol
Value
Junction to Ambient 1 unit, PW≤10s *¹
R_θJA
69.4
Junction to Ambient 2 units, PW≤10s *¹
R_θJA
56.8
Note: *¹ When mounted on ceramic substrate (2000mm² × 0.8mm)
Unit
°C/W
VDSS
60V
RDS(on) Max
58mΩ@ 10V
84mΩ@ 4.5V
95mΩ@ 4.0V
ID _Max
4.5A
Electrical Connection
N-Channel
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
1
2
3
4
Packing Type : TL
Marking
FW297
TL
LOT No.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
April 2015 - Rev. 0
Publication Order Number :
FW297/D