FW217A Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : EN8994B
FW217A
N-Channel Power MOSFET
35V, 6A, 39mΩ, Dual SOIC8
http://onsemi.com
Features
• _{On-state resistance RDS(on)1=30mΩ (typ.)}
• _{4.5V drive}
• _{Halogen free compliance}
• _{Protection Diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm²Ã—0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm²Ã—0.8mm), PW≤10s
Ratings
Unit
35
V
±20
V
6
A
6.5
A
24
A
1.8
W
2.2
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
8
5
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW217A-TL-2W
0.22
Packing Type : TL
Marking
1
1.27
4
0.445 ^{0.254 (GAGE PLANE)}
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
TL
Electrical Connection
8
7
6
5
FW217
A ^{LOT No.}
Semiconductor Components Industries, LLC, 2013
July, 2013
1
2
3
4
61312 TKIM/31412 TKIM/22212PA TKIM TC-00002682 No.8994-1/7