FW216A Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA0176C
FW216A
N-Channel Power MOSFET
35V, 4.5A, 64mΩ, Dual SOIC8
http://onsemi.com
Features
• _{ON-resistance Nch : RDS(on)1=49mΩ (typ.)}
• _{4.0V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
Duty cycle≤1%
When mounted on ceramic substrate (2000mm²Ã—0.8mm) 1unit, PW≤10s
When mounted on ceramic substrate (2000mm²Ã—0.8mm), PW≤10s
Ratings
Unit
35
V
±20
V
4.5
A
18
A
1.6
W
2.2
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
8
5
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
FW216A-TL-2W
• Minimum Packing Quantity : 2,500 pcs./reel
0.22
Packing Type : TL
Marking
1
1.27
4
0.445 ^{0.254 (GAGE PLANE)}
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
FW216
TL
A ^{LOT No.}
Electrical Connection
8
7
6
5
Semiconductor Components Industries, LLC, 2013
October, 2013
1
2
3
4
O1613 TKIM/61312 TKIM/31412 TKIM/20112PA TKIM TC-00002686 No. A0176-1/5