ENA2329 Datasheet, PDF (1/6 Pages) ON Semiconductor – Dual N-Channel Power MOSFET

Ordering number : ENA2329A
EFC6612R
Power MOSFET
20V, 5.1mΩ, 23A, Dual N-Channel
http://onsemi.com
Features
 2.5V drive
 Protection diode in
 Halogen free compliance
 Common-drain type
 2KV ESD HBM
Applications
 Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Source to Source Voltage
VSSS
Gate to Source Voltage
VGSS
Source Current (DC)
IS
Source Current (Pulse)
Total Dissipation
ISP
PW100s, duty cycle1%
PT
When mounted on ceramic substrate (5000mm²ï‚´0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
20
V
12
V
23
A
100
A
2.5
W
150
C
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm²ï‚´0.8mm)
Symbol
R_JA
Value
50
Unit
C/W
Electrical Characteristics at Ta  25C
Parameter
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Symbol
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
Conditions
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
min
20
0.5
Value
Unit
typ
max
V
1 A
1 A
1.3 V
4.7
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72314HK TC-00003135/42414TKIM No.A2329-1/6