EN2855 Datasheet, PDF (1/2 Pages) ON Semiconductor – 1.0A Power Rectifier

Ordering number : EN2855E
DSK10B,DSK10C, DSK10E
1.0A Power Rectifier
http://onsemi.com
Features
• _{Designed for 5mm-pitch automatic insertion}
• _{Small plastic molded structure (3mm body)}
• _{Peak reverse voltage : 100 to 400V}
• _{Average output current : 1.0A}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Peak Reverse Voltage
Average Recitifiedd Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRM
I_O
I_FSM
Tj
Tstg
Conditions
50Hz sine wave, 1cycle
DSK10B DSK10C DSK10E
Unit
100
200
400
V
1.0
A
45
A
150
°C
--40 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Forward Voltage
Reverse Current
Symbol
V_F
IR
Conditions
I_F=1.0A
VR:At each VRM
Value
Unit
min
typ
max
1.1
V
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Package Dimensions
unit:mm(typ.)
20.0
3.0
20.0
1
0.6φ ²
cathode mark
1 : Cathode
2 : Anode
Ordering Information
Device
Shipping
DSK10B
500 Unit/Bag
DSK10B-AT1
3,000 Unit/Box
DSK10B-BT
3,000 Unit/Box
DSK10C
500 Unit/Bag
DSK10C-AT1
3,000 Unit/Box
DSK10C-BT
3,000 Unit/Box
memo
Pb-Free
DSK10C-ET1
3,000 Unit/Box
DSK10E
500 Unit/Bag
DSK10E-AT1
3,000 Unit/Box
DSK10E-BT
3,000 Unit/Box
DSK10E-ET1
3,000 Unit/Box
Semiconductor Components Industries, LLC, 2014
February, 2014
22414HK TC-00000832/82207TIIM/33103TSIM/91001GIIM
/53098 HA(KT)/92995GI(KOTO)/D268TA,TS RC No. A2855-1/2