EMZ1DXV6T1_06 Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual General Purpose Transistors

EMZ1DXV6T1,
EMZ1DXV6T5
Dual General Purpose
Transistors
NPN/PNP Dual (Complementary)
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
• Lead−Free Solder Plating
• Low V_CE(SAT), t0.5 V
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
V_CEO
Collector −Base Voltage
V_CBO
Emitter −Base Voltage
V_EBO
Collector Current − Continuous
I_C
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Total Device Dissipation
P_D
T_A = 25°C
Derate above 25°C
Value
−60
−50
−6.0
−100
Unit
V
V
V
mAdc
Max
357 (Note 1)
2.9 (Note 1)
Unit
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
R_qJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
500 (Note 1)
4.0 (Note 1)
Unit
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
R_qJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
T_J, T_stg −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
6
1
SOT−563
CASE 463A
STYLE 1
MARKING DIAGRAM
3Z M G
G
3Z = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 1
Publication Order Number:
EMZ1DXV6/D