EMH2801 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – SBD : Schottky Barrier Diode General-Purpose Switching Device Applications

Ordering number : ENA1821A
EMH2801
P-Channel Power MOSFET
–20V, –3A, _{85mΩ, Single EMH8 with Schottky Diode}
http://onsemi.com
Features
• _{Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package}
facilitating high-density mounting
• _[MOSFET] • _{Low ON-resistance}
• _{1.8V drive}
• _[SBD]
• _{Small switching noise}
• _{Low forward voltage (IF=2.0A, VF max=0.46V)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--20
V
±10
V
--3
A
--20
A
1.0
W
150
°C
--55 to +125
°C
Continued on next page.
Package Dimensions
unit : mm (typ)
7045-007
0.2
8
5
0.125 ^EMH2801-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
QA
1
4
0.5
2.0
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
EMH8
TL
Electrical Connection
8
7
6
5
Lot No.
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/81110PE TKIM TC-00002458 No. A1821-1/8