EMH2604 Datasheet, PDF (1/9 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN9006A
EMH2604
Power MOSFET
20V, 4A, 45mΩ, ^{–20V, –3A,} 85mΩ, Complementary Dual EMH8
http://onsemi.com
Features
• _{Nch + Pch MOSFET}
• _{ON-resistance Nch : RDS(on)1=34mΩ(typ.)}
Pch : RDS(on)1=65mΩ(typ.)
• _{1.8V drive}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel P-channel
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
20
±10
4
20
1.0
1.2
150
--20
V
±10
V
--3
A
--20
A
W
W
°C
Storage Temperature
Tstg
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-002
0.2
8
5
1
4
0.5
2.0
EMH2604-TL-H
0.125
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
FD
TL
LOT No.
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
EMH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/60111PE TKIM TC-00002607 No.9006-1/9