EMH2418R Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2267A
EMH2418R
N-Channel Power MOSFET
24V, 9A, 15mΩ, Dual EMH8
http://onsemi.com
Features
 Low On-resistance
2.5V drive
 Common-Drain Type
 Protection diode in
 Built-in gate protection resistor
 Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
PW10s, duty cycle1%
Power Dissipation
When mounted on ceramic substrate(900mm²ï‚´0.8mm) 1unit
Total Dissipation
When mounted on ceramic substrate(900mm²ï‚´0.8mm)
JunctionTemperature
Storage Temperature
PD
PT
Tj
Tstg
Value
Unit
24
V
12
V
9
A
40
A
1.3 W
1.4 W
150 C
- 55 to C
+150
Electrical Connection
N-channel
8
7
6
5
1
2
3
4
Marking
LT
LOT No.
Packing Type:TL
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate(900mm²ï‚´0.8mm)
Symbol
R_JA
Value
Unit
96 C/W
TL
Ordering & Package Information
Device
Package Shipping
EMH2418R-TL-H
Pb-free and
Halogen Free
EMH8
3,000
pcs. / reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Semiconductor Components Industries, LLC, 2014
February, 2014
21314HK TC-00003090/D1813HK PE No. A2267-1/6