EMH2417R Datasheet, PDF (1/5 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2313A
EMH2417R
N-Channel Power MOSFET
12V, 11A, 10mΩ, Dual EMH8 Common Drain
http://onsemi.com
Features
 Low On-resistance
 2.5V drive
 Common-drain type
 Protection diode in
 Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Total Dissipation
Junction Temperature
ID
IDP
PW10s, duty cycle1%
PD
When mounted on ceramic substrate(900mm²ï‚´0.8mm) 1unit
PT
When mounted on ceramic substrate(900mm²ï‚´0.8mm)
Tj
Storage Temperature
Tstg
Value
Unit
12
V
12
V
11
A
40
A
1.3
W
1.4
W
150
C
- 55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm²ï‚´0.8mm)
Symbol
R_JA
Value
96
Unit
C /W
Electrical Characteristics at Ta  25C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
ID=1mA, VGS=0V
VDS=10V, VGS=0V
VGS=±8V, VDS=0V
VDS=6V, ID=1mA
VDS=6V, ID=5A
ID=5A, VGS=4.5V
ID=5A, VGS=4.0V
ID=5A, VGS=3.1V
ID=2.5A, VGS=2.5V
min
12
0.5
6.4
6.8
8.8
11.2
Value
Unit
typ
max
V
1
A
1
A
1.3
V
13
S
8
10
m
8.5
11
m
11
15.4
m
14
19.6
m
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
60414HK TC-00003123/31714TKIM No. A2313-1/5