EMH2411R Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1421A
EMH2411R
N-Channel Power MOSFET
30V, 5A, 36.5mΩ, Dual EMH8
http://onsemi.com
Features
• _{Low ON-resistance}
• _{Best suited for LiB charging and discharging switch}
• _{Common-drain type}
• _{2.5V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
30
V
±12
V
5
A
60
A
1.3
W
1.4
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-006
0.2
8
5
0.125 EMH2411R-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
LL
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/52709PE MS IM TC-00001977 No. A1421-1/7