EMH2409 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1890A
EMH2409
N-Channel Power MOSFET
30V, 4A, 59mΩ, Dual EMH8
http://onsemi.com
Features
• _{The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,}
thereby enabling high-density mounting
• _{4V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
30
V
±20
V
4
A
16
A
1.0
W
1.2
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-006
0.2
8
5
0.125 ^EMH2409-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
EMH8
LJ
TL
Lot No.
Electrical Connection
8
7
6
5
Semiconductor Components Industries, LLC, 2013
July, 2013
1
2
3
4
62712 TKIM/D1510PE TKIM TC-00002532 No. A1890-1/7