EMH2314 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN8759A
EMH2314
Power MOSFET
–12V, _37mΩ, –5A, _{Dual P-Channel}
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=28mW(typ.)}
• _{1.8V drive}
• _{Halogen free compliance}
• _{Protection Diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Value
Unit
--12
V
±8
V
--5
A
--20
A
1.0
W
1.2
W
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
Symbol
R_θJA
Value
125
Unit
°C/W
Package Dimensions
unit : mm (typ)
7045-002
0.2
8
5
EMH2314-TL-H
0.125
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
4
0.5
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
TL
Electrical Connection
8
7
6
5
EMH8
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
2
3
4
MP
LOT No.
Semiconductor Components Industries, LLC, 2014
July, 2014
72214HK TC-00003140/51612TKIM PE No.8759-1/5