EMH1307 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1715A
EMH1307
P-Channel Power MOSFET
–20V, –6.5A, _{26mΩ, Single EMH8}
http://onsemi.com
Features
• _{ON-resistance RDS(on)1 : 20mΩ(typ.)}
• _{1.8V drive}
• _{Protection diode in}
• _{Input Capacitance Ciss=1100pF(typ.)}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm²Ã—0.8mm)
Ratings
Unit
--20
V
±10
V
--6.5
A
--26
A
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-001
0.2
8
5
0.125 ^EMH1307-TL-H
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Marking
1
4
0.5
2.0
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
EMH8
TL
Electrical Connection
8
7
6
5
JG
Lot No.
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/O2010PE TKIM TC-00002339 No. A1715-1/7