EMF18XV6T5_06 Datasheet, PDF (1/5 Pages) ON Semiconductor – Dual Transistor - Power Management

EMF18XV6T5
Dual Transistor -
Power Management
NPN/PNP Dual (Complementary)
Features
• Low V_CE(SAT), t0.5 V
• These are Pb−Free Devices
MAXIMUM RATINGS
Q1
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Q2
Rating
V_CBO
V_CEO
I_C
Symbol
50
50
100
Value
Vdc
Vdc
mAdc
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
−60
−50
−6.0
−100
V
V
V
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation T_A = 25°C
P_D
Derate above 25°C
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
R_qJA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation T_A = 25°C
P_D
Derate above 25°C
500
(Note1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
R_qJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
T_J, T_stg − 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 2
http://onsemi.com
(3)
(2)
(1)
R₁
Q₁
Q₂
R₂
(4)
(5)
(6)
6
1
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
UV M G
G
1
UV = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
EMF18XV6T5
SOT−563 8000/Tape & Reel
(Pb−Free)
EMF18XV6T5G
SOT−563 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Publication Order Number:
EMF18XV6/D