EMC2DXV5T1G_14 Datasheet, PDF (1/11 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors

EMC2DXV5T1G,
EMC3DXV5T1G,
EMC4DXV5T1G,
EMC5DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1G series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted, common for Q₁
and Q₂, − minus sign for Q₁ (PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage
V_CBO
50
Vdc
Collector-Emitter Voltage
V_CEO
50
Vdc
Collector Current
I_C
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
3
2
1
R1
R2
Q2
R2
Q1
R1
4
5
5
1
SOT−553
CASE 463B
MARKING DIAGRAM
Ux M G
G
Ux = Specific Device Code
x = C, 3, E, or 5
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
May, 2014 − Rev. 7
Publication Order Number:
EMC2DXV5T1/D