EFC8811R Datasheet, PDF (1/6 Pages) ON Semiconductor – Dual N-Channel Power MOSFET

EFC8811R
Advance Information
Power MOSFET
12V, 3.2mΩ, 27A, Dual N-Channel
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for single cell lithium-ion battery applications.
Features
 2.5V drive
 2kV ESD HBM
 Common-Drain Type
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
Applications
 Single Cell Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Source to Source Voltage
Gate to Source Voltage
VSSS
VGSS
12
V
8
V
Source Current (DC)
IS
Source Current (Pulse)
PW100s, duty cycle1%
ISP
Total Dissipation
When mounted on ceramic substrate
PT
(5000mm²  0.8mm)
27
A
100
A
2.5 W
Junction Temperature
Tj
150 C
Storage Temperature
Tstg
55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(5000mm²  0.8mm)
Symbol
R_JA
Value
Unit
50 C/W
www.onsemi.com
VSSS
12V
RSS(on) Max
3.2mΩ@ 4.5V
3.2mΩ@ 4.0V
3.2mΩ@ 3.8V
4.4mΩ@ 3.1V
6.3mΩ@ 2.5V
IS _Max
27A
ELECTRICAL CONNECTION
N-Channel
4, 6
Rg
5
Rg
2
Rg=200Ω
1 : SOURCE1
2 : GATE1
3 : SOURCE1
4 : SOURCE2
5 : GATE2
1, 3 6 : SOURCE2
CSP6, 1.77x3.54 /
EFCP3517-6DGH-020
MARKING
ML
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2015
1
October 2015 - Rev. P1
Publication Order Number :
EFC8811R/D