EFC6602R-TR Datasheet, PDF (1/8 Pages) ON Semiconductor – N-Channel Power MOSFET 12V, 18A, 5.9mΩ, Dual EFCP

Ordering number : ENA2152A
EFC6602R
N-Channel Power MOSFET
12V, 18A, 5.9mΩ, Dual EFCP
http://onsemi.com
Features
• _{2.5V drive}
• _{Common-drain type}
• _{2KV ESD HBM}
• _{Protection diode in}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm²Ã—0.8mm)
Ratings
Unit
12
V
±12
V
18
A
60
A
2.0
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7073-001
2.7
654
EFC6602R-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Taping Type : TR
Marking
123
0.65
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
0.3
EFCP2718-6CE-020
TR
Electrical Connection
4, 6
Rg
5
MB
LOT No.
Rg
2
Rg=200Ω
1, 3
Semiconductor Components Industries, LLC, 2013
July, 2013
13013 TKIM TC-00002866/N2112 TKIM TC-00002838/HD 121009 PF No. A2152-1/8