EFC4626R Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2292A
EFC4626R
N-Channel Power MOSFET
24V, 5A, 46.2mΩ, Dual EFCP
http://onsemi.com
Features
 2.5V drive
 Protection diode in
 Common-drain type
 2KV ESD HBM
 Halogen free compliance
Applications
 Lithium-ion battery charging and discharging switch
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Source to Source Voltage
Gate to Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Junction Temperature
Storage Temperature
VSSS
VGSS
IS
ISP
PT
Tj
Tstg
PW10s, duty cycle1%
When mounted on ceramic substrate (5000mm²ï‚´0.8mm)
Value
Unit
24
V
10
V
5
A
60
A
1.4
W
150
C
- 55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (5000mm²ï‚´0.8mm)
Symbol
R_JA
Value
84
Unit
C /W
Electrical Characteristics at Ta  25C
Parameter
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Symbol
V(BR)SSS
ISSS
IGSS
VGS(th)
gFS
Conditions
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=2A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
min
24
0.5
Value
Unit
typ
max
V
1 A
1 A
1.3 V
7
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
42814HK TC-00003108/21214TKIM No.A2292-1/6