EFC4612R-TR Datasheet, PDF (1/5 Pages) ON Semiconductor – General-Purpose Switching Device Applications

Ordering number : ENA1477
ON Semiconductor
DATA SHEET
EFC4612R
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{2.5V drive.}
• _{Built-in gate protection resistor.}
• _{Best suited for LiB charging and discharging switch.}
• _{Common-drain type.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm²Ã—0.8mm)
Ratings
Unit
24
V
±12
V
6
A
60
A
1.6
W
150
°C
--55 to +150
°C
Parameter
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : FN
Symbol
Conditions
V(BR)SSS
ISSS
IGSS
VGS(off)
| yfs |
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
min
24
0.5
Ratings
Unit
typ
max
V
1
μA
±10
μA
1.3
V
3.1
S
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Publication Order Number:
EFC4612R/D