ECH8695R Datasheet, PDF (1/5 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2314A
ECH8695R
N-Channel Power MOSFET
24V, 11A, 9.1mΩ, Dual ECH8 Common Drain
http://onsemi.com
Features
 Low On-resistance
 2.5V drive
 Common-drain type
 Protection diode in
 Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Total Dissipation
Junction Temperature
ID
IDP
PW10s, duty cycle1%
PD
When mounted on ceramic substrate(900mm²ï‚´0.8mm) 1unit
PT
When mounted on ceramic substrate(900mm²ï‚´0.8mm)
Tj
Storage Temperature
Tstg
Value
Unit
24
V
12.5
V
11
A
60
A
1.4
W
1.5
W
150
C
- 55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm²ï‚´0.8mm) 1unit
Symbol
R_JA
Value
89.3
Unit
C /W
Electrical Characteristics at Ta  25C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=4.5V
ID=5A, VGS=4.0V
ID=5A, VGS=3.1V
ID=2.5A, VGS=2.5V
min
24
0.5
5.6
5.8
6.5
7.6
Value
Unit
typ
max
V
1
A
1
A
1.3
V
6.5
S
7.0
9.1
m
7.3
9.5
m
8.2
11.5
m
9.5
13.3
m
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
42814HK TC-00003113/31714TKIM No.A2314-1/5