ECH8693R_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET

ECH8693R
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
24 V, 7 mΩ, 14 A, Dual N-Channel
This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines.
Best suited for 1-2 cells Lithium-ion Battery applications.
Features
 Low On-Resistance
 2.5 V drive
 Common-Drain Type
 ESD Diode-Protected Gate
 Built-in Gate Protection Resistor
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 1-2 cells Lithium-ion Battery Charging and Discharging Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
24
V
12.5
V
Drain Current (DC)
ID
14
A
Drain Current (Pulse)
PW  10 s, duty cycle  1%
IDP
60
A
Power Dissipation
Surface mounted on ceramic substrate
PD
(900 mm²  0.8 mm) 1 unit
Total Dissipation
Surface mounted on ceramic substrate
PT
(900 mm²  0.8 mm)
1.4
W
1.5
W
Junction Temperature
Tj
150 C
Storage Temperature
Tstg
55 to +150 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should
not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
Surface mounted on ceramic substrate
(900 mm²  0.8 mm) 1 unit
Symbol
R_JA
Value
Unit
89.2 C/W
www.onsemi.com
VDSS
24 V
RDS(on) Max
7 mΩ @ 4.5 V
7.5 mΩ @ 4.0 V
9.1 mΩ @ 3.1 V
10.5 mΩ @ 2.5 V
ID _Max
14 A
ELECTRICAL CONNECTION
N-Channel
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1
2
3
4
MARKING
SOT-28FL / ECH8
UQ
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
December 2016 - Rev. 3
Publication Order Number :
ECH8693R/D