ECH8690 Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET

Ordering number : ENA2185B
ECH8690
Power MOSFET
60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8
http://onsemi.com
Features
• On-State Resistance Nch:RDS(on)1=42mΩ(typ.)
Pch:RDS(on)1=73mΩ(typ.)
• 4V drive
• Nch+Pch MOSFET
• Protection diode in
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
VDSS
VGSS
ID
IDP
PD
PT
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate
(1200mm²Ã—0.8mm)1unit
When mounted on ceramic substrate
(1200mm²Ã—0.8mm)
Channel Temperature
Tch
Storage Temperature
Tstg
N-channel
P-channel
Unit
60
-60
V
±20
±20
V
4.7
-3.5
A
30
-30
A
1.5
W
1.8
W
150
°C
- 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
8
5
ECH8690-TL-H
0.15
0 to 0.02
1
4
0.65
0.3
Bottom View
1: Source1
2: Gate1
3: Source2
4: Gate2
5: Drain2
6: Drain2
7: Drain1
8: Drain1
ECH8
Ordering & Package Information
Device
Package
Shipping
ECH8690-TL-H
ECH8
3000
pcs. / reel
note
Pb-Free
and
Halogen Free
Packing Type: TL
Marking
UM
TL
LOT No.
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
October, 2013
O1613 TKIM/61913 TKIM TC-00002960/52213TKIM TC-00002920 No.A2185-1/8