|
ECH8671 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications | |||
|
Ordering number : ENA1456A
ECH8671
P-Channel Power MOSFET
â12V, â3.5A, 77mΩ, Dual ECH8
http://onsemi.com
Features
⢠1.8V drive
⢠Composite type, facilitating high-density mounting
⢠Halogen free compliance
Speciï¬cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PWâ¤10μs, duty cycleâ¤1%
When mounted on ceramic substrate (1200mm2Ã0.8mm) 1unit
When mounted on ceramic substrate (1200mm2Ã0.8mm)
This product is designed to âESD immunity < 200V*â, so please take care when handling.
* Machine Model
Ratings
Unit
--12
V
±10
V
--3.5
A
--30
A
1.3
W
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
8
5
ECH8671-TL-H
0.15
0 to 0.02
Product & Package Information
⢠Package
: ECH8
⢠JEITA, JEDEC
:-
⢠Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TS
TL
LOT No.
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/42209PE MSIM TC-00001907 No. A1456-1/7
|
▷ |