ECH8668 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Ordering number : ENA1510A
ECH8668
Power MOSFET
20V, 7.5A, 17mΩ, ^{–20V, –5A,} 38mΩ, Complementary Dual ECH8
http://onsemi.com
Features
• _{The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and}
high-speed switching , thereby enablimg high-density mounting
• _{1.8V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
IDP
PD
PT
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
20
±10
7.5
40
1.3
1.5
150
--20
V
±10
V
--5
A
--40
A
W
W
°C
Tstg
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
8
5
ECH8668-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TP
Lot No.
TL
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
80112 TKIM/O2809PE TKIM TC-00002167 No. A1510-1/8