ECH8660 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications

Ordering number : ENA1358B
ECH8660
Power MOSFET
30V, 4.5A, 59mΩ, ^{–30V, –4.5A,} 59mΩ, Complementary Dual ECH8
http://onsemi.com
Features
• _{The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and}
high-speed switching , thereby enablimg high-density mounting
• _{4V drive}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
30
--30
V
VGSS
±20
±20
V
ID
4.5
--4.5
A
IDP
PW≤10μs, duty cycle≤1%
PD
When mounted on ceramic substrate (1200mm²Ã—0.8mm) 1unit
PT
When mounted on ceramic substrate (1200mm²Ã—0.8mm)
30
1.3
1.5
--30
A
W
W
Tch
150
°C
Tstg
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
8
5
ECH8660-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TF
Lot No.
TL
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/8