ECH8655R Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1011A
ECH8655R
N-Channel Power MOSFET
24V, 9A, 17mΩ, Dual ECH8
http://onsemi.com
Features
• _{Low ON-resistance}
• _{2.5V drive}
• _{Common-drain type}
• _{Protection diode in}
• _{Built-in gate protection resistor}
• _{Best suited for LiB charging and discharging switch}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
24
V
±12
V
9
A
60
A
1.4
W
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
8
5
ECH8655R-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TA
Lot No.
TL
1
4
0.65
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM/40908PE TIIM TC-00001311 No. A1011-1/7