ECH8420 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : EN8993A
ECH8420
N-Channel Power MOSFET
20V, 14A, 6.8mΩ, Single ECH8
http://onsemi.com
Features
• _{ON-resistance RDS(on)1=5.2mΩ (typ.)}
• _{1.8V drive.}
• _{Halogen free compliance.}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
20
V
±12
V
14
A
50
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
8
5
ECH8420-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
ZA
TL
Lot No.
1
4
0.65
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/O1911PE TKIM TC-00002660 No.8993-1/7