ECH8410 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1331A
ECH8410
N-Channel Power MOSFET
30V, 12A, 10mΩ, Single ECH8
http://onsemi.com
Features
• _{Low ON-resistance.}
• _{4V drive.}
• _{Halogen free compliance.}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
30
V
±20
V
12
A
60
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
8
5
ECH8410-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
KQ
TL
Lot No.
1
4
0.65
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM TC-00002188/N2509PE TK IM TC-00002188 No. A1331-1/7