ECH8315 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

ECH8315
Power MOSFET
–30V, 25mΩ, –7.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to low on resistance. This devices
is suitable for applications with low on resistance requirements.
Features
 Low On-Resistance
 4V drive
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
Typical Applications
 Load Switch
 Protection Switch for Lithium-ion Battery
 Motor Driver
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
20
V
Drain Current (DC)
ID
7.5
A
Drain Current (Pulse)
PW  10s, duty cycle  1%
IDP
40
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm²  0.8mm)
1.5
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm²  0.8mm)
Symbol
R_JA
Value
Unit
83.3 C/W
www.onsemi.com
VDSS
30V
RDS(on) Max
25mΩ@ 10V
44mΩ@ 4.5V
49mΩ@ 4V
ID _Max
7.5A
ELECTRICAL CONNECTION
P-Channel
8
7
6
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
1
2
3
4
PACKING TYPE : TL
TL
MARKING
JS
Lot No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
April 2015 - Rev. 2
Publication Order Number :
ECH8315/D