ECH8308 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1182A
ECH8308
P-Channel Power MOSFET
–12V, –10A, _{12.5mΩ, Single ECH8}
http://onsemi.com
Features
• _{Best suited for load switching}
• _{1.8V drive}
• _{Protection diode in}
• _{Low ON-resistance}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--12
V
±10
V
--10
A
--40
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
8
5
ECH8308-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
JK
Lot No.
TL
1
4
0.65
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8
7
6
5
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7