DTA114GE Datasheet, PDF (1/6 Pages) ON Semiconductor – General Purpose Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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General Purpose Transistor
PNP Bipolar Junction Transistor
with a 10 kW Base–Emitter Resistor
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient ⁽¹⁾
Operating and Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PD
PD
R_qJA
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
Value
50
50
5.0
100
20
150
78
833
–55 to 150
Unit
V
V
V
mA
mA
mW
mW
°C/W
°C
DTA114GE
50 Volts
100 mAmps
150 mW
3
2
1
CASE 463–01
SOT–416/SC–90
BASE (1)
RBE
RBE = 10 kW
COLLECTOR (3)
EMITTER (2)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 µAdc)
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
Collector–Emitter Breakdown Voltage
m (IE = 720 Adc)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0 Adc)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0 Adc)
BVCBO
Vdc
50
—
—
BVCEO
Vdc
50
—
—
BVEBO
Vdc
5.0
—
—
ICBO
—
mAdc
—
0.5
IEBO
mAdc
300
—
580
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC = 5.0 mAdc)
Collector–Emitter Saturation Voltage
m (IC = 10 mAdc, IB = 500 Adc)
hFE
30
VCE(sat)
—
—
—
Vdc
—
0.3
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