DSM10G Datasheet, PDF (1/3 Pages) ON Semiconductor – 1.0A Power Rectifier

DSM10G
Ordering number : EN2794C
DSM10G
Diffused Junction Silicon Diode
1.0A Power Rectifier
Features
• _{Facilitates automatic mounting and miniaturization in end products.}
• Peak reverse voltage : VRM=600V.
• Average output current : IO=1.0A.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
50Hz sine wave, mounted on an alumina board
Load resistor, mounted on a PCB
50Hz sine wave, non-repetitive, 1 cycle peak value
Parameter
Forward Voltage
Reverse Current
Thermal Resistance
Symbol
Conditions
min
VF
IF=1A
IR
VR=VRM
θj-l
Junction-Lead
Junction-Ambient Mounted on an alumina board
θj-a
Mounted on a PCB
Ratings
Unit
600
V
1.0
A
0.75
A
25
A
150
°C
--55 to +150
°C
Ratings
typ
max
1.1
10
23
108
157
Unit
V
µA
°C/W
°C/W
°C/W
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn3seImwiw.cwo.omnsemi.com
Publication Order Number:
DSM10G/D