DCA010 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Very High-Speed Switching Diode

DCA010
Very High-Speed Switching Diode
www.onsemi.com
Features
• _{Ideally suited for use in hybrid ICs because of very small-sized package}
• _{Fast switching speed} • _{Small interterminal capacitance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Peak Reverse Voltage
Reverse Voltage
VRM
VR
Peak Forward Current
IFM
Average Rectified Current
I_O
Surge Current(1µs)
Allowable Power Dissipation
Junction Temperature
Storage Temperature
I_FSM
P
Tj
Tstg
Unit rating
Total rating
Unit rating
Total rating
Unit rating
Total rating
Conditions
Raitings
Unit
85
V
80
V
300 mA
450 mA
100 mA
150 mA
4
A
6
A
200 mW
125
°C
--55to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
VF1
Forward Voltage
VF2
VF3
Reverse Current
IR1
IR2
Interterminal Capacitance
C
Reverse Recovery Time
trr
Marking:W5
Conditions
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50W, Irr=0.1Irp
Raitings
Unit
min
typ
max
0.61
V
0.74
V
1.20
V
0.1
mA
0.5
mA
4.0
pF
4.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Package Dimensions
unit:mm(typ.)
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
1 : Cathode
2 : Cathode
3 : Anode
Reverse Recovery Time Test Circuit
0.01µF _DUT
0
50W
2kW _50W
--6V
IF=10mA
Irp
0.1Irp
50ns
trr
Electrical Connection
Anode
3
CP
1
ORDERING INFORMATION
Cathode
See detailed ordering and shipping information on page 2 of this data sheet.
2
Cathode
(Top view)
©Semiconductor Components Industries, LLC, 2014
1
December 2014 - Rev. 0
Publication Order Nunber:
DCA010/D