DBD250G Datasheet, PDF (1/2 Pages) ON Semiconductor – 25.0A Single-Phase Bridge Rectifier

Ordering number : ENA1204A
DBD250G
25.0A Single-Phase Bridge Rectifier
http://onsemi.com
Features
• _{Plastic molded structure}
• _{Glass passivation for high reliability}
• _{Peak reverse voltage : VRM=600V}
• _{Average output current : IO=25.0A}
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter
Symbol
Peak Reverse Voltage
VRM
Average Output Current
I_O
Surge Forward Current
Junction Temperature
Storage Temperature
Dilective Strength Voltage
I_FSM
Tj
Tstg
VIS
Conditions
Ta=40°C
Ta=40°C, With 300✕300✕3.0mm³ Cu fin
50Hz sine wave, 1cycle
Terminals tc case, AC 1 minute
Raitings
Unit
600
V
6.0
A
25.0
A
400
A
150
°C
--40 to +150
°C
2
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Tc=25°C ^*Per Constituent element of bridge.
Parameter
Symbol
Conditions
Forward Voltage
VF
Reverse Current
Thremal Resistance
IR
Rth(j-c)
Note) Maximum tightening torque : 0.98Nm
IF=12.5A*
VR:At each VRM*
Junction-Case
Raitings
Unit
min
typ
max
1.05
V
10
mA
1.5 °C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Package Dimensions
unit:mm(typ.)
32.0 MAX
9
7.95
3.4
2.5 MIN
1.5
4.9
14.4
1.65 2.4
10.0
11.0
23.0 MAX
Semiconductor Components Industries, LLC, 2014
April, 2014
42814HK/73008TIIM TA-0858 RB No. A1204-1/2