DBD10G Datasheet, PDF (1/2 Pages) ON Semiconductor – 1.0A Single-Phase Bridge Rectifier

Ordering number : EN7030B
DBD10G
1.0A Single-Phase Bridge Rectifier
http://onsemi.com
Features
• _{Plastic molded structure}
• _{Peak reverse voltage : VRM=600V}
• _{Average output current : IO=1.0A}
Electrical Connection
--
+
Specifications
Absolute Maximum Ratings at Ta=25°C
∼
∼
Parameter
Symbol
Conditions
Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
VRM
I_O
I_FSM
Tj
Ta=25°C
50Hz sine wave, 1cycle
Storage Temperature
Tstg
Value
Unit
600
V
1.0
A
30
A
150
°C
--40 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Forward Voltage
Reverse Current
Thremal Resistance
Thremal Resistance
VF
IR
Rth(j-l)
Rth(j-a)
Conditions
IF=0.5A
VR=VRM
Junction-Lead
Junction-Ambient
Value
Unit
min
typ
max
1.05
V
10
mA
15 °C / W
68 °C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Package Dimensions
unit:mm(typ.)
Surface mount type (TM emboss taping)
0.25
1.3
3.0
1.3
6.8
C0.8
6.8
C0.8
0.25
DBD10G-TM-E
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
0.55
5.0
DBD10G-E
60814HK TC-00003130/N0901GIIM/73001GIIM No. A7030-1/2