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| DA2J10100L Datasheet, PDF (1/5 Pages) ON Semiconductor – Silicon epitaxial planar type | |||
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DA2J101
Silicon epitaxial planar type
For high speed switching circuits
ï¢ Features
ï Small reverse current IR
ï Short reverse recovery time trr
ï Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
ï¢ Marking Symbol: A1
Unit: mm
ï¢ Packaging
DA2J10100L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward surge current *1
Junction temperature
Storage temperature
Note) *1: t = 1 s
VR
80
V
VRM
80
V
IF
100
mA
IFM
225
mA
IFSM
500
mA
Tj
150
°C
Tstg â55 to +150 °C
1: Cathode
2: Anode
Panasonic
JEITA
Code
SMini2-F5-B
SC-90A

ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 100 mA
0.92 1.20
V
Reverse voltage
VR IR = 100 mA
80
V
Reverse current
IR VR = 80 V
100
nA
Terminal capacitance
Reverse recovery time *1
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V, Irr = 0.25 Ã IR
1.2
pF
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *1: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
Wave Form Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.25 Ã IR
IF = 10 mA
VR = 6 V
Publication date: October 2012
Ver. EED
1
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