DA121TT1_05 Datasheet, PDF (1/4 Pages) ON Semiconductor – Silicon Switching Diode

DA121TT1
Preferred Device
Silicon Switching Diode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
V_R
80
V
Recurrent Peak Forward Current
I_F
200
mA
Peak Forward Surge Current
Pulse Width = 10 ms
I_FM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
T_A = 25°C
Derated above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
R_qJA
555
°C/W
Total Device Dissipation,
FR−4 Board (Note 2)
T_A = 25°C
Derated above 25°C
P_D
360
mW
2.9
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
345
°C/W
Junction and Storage Temperature
Range
T_J, T_stg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
© Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 2
http://onsemi.com
3
CATHODE
1
ANODE
3
2
1
SOT−416 / SC−75
CASE 463
STYLE 2
MARKING DIAGRAM
6A M G
G
1
6A
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
DA121TT1
SOT−416 3000 / Tape & Reel
DA121TT1G
SOT−416 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
DA121TT1/D