DA121TT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Silicon Switching Diode

DA121TT1G
Silicon Switching Diode
Features
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS (T_A = 25C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse Width = 10 ms
V_R
80
V
I_F
200
mA
I_FM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR--4 Board (Note 1)
T_A = 25C
Derated above 25C
Thermal Resistance,
Junction--to--Ambient (Note 1)
P_D
R_θJA
225
mW
1.8
mW/C
555
C/W
Total Device Dissipation,
FR--4 Board (Note 2)
T_A = 25C
Derated above 25C
Thermal Resistance,
Junction--to--Ambient (Note 2)
P_D
R_θJA
360
mW
2.9
mW/C
345
C/W
Junction and Storage Temperature
Range
T_J, T_stg --55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--4 @ Minimum Pad
2. FR--4 @ 1.0  1.0 Inch Pad
3
CATHODE
1
ANODE
3
2
1
SOT--416 / SC--75
CASE 463
STYLE 2
MARKING DIAGRAM
6A M G
G
1
6A
= Specific Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
DA121TT1G
SOT--416 3000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 3
Publication Order Number:
DA121TT1/D