D44VH10 Datasheet, PDF (1/5 Pages) ON Semiconductor – Complementary Silicon Power Transistors

D44VH10 (NPN),
D45VH10 (PNP)
Complementary Silicon
Power Transistors
These complementary silicon power transistors are designed for
high-speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well-suited for drivers
for high power switching circuits.
Features
•ăFast Switching -
ą t_f = 90 ns (Max)
•ăKey Parameters Specified @ 100°C
•ăLow Collector-Emitter Saturation Voltage -
ąV_CE(sat) = 1.0 V (Max) @ 8.0 A
•ăComplementary Pairs Simplify Circuit Designs
•ăPb-Free Packages are Available*
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector-Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector-Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current -Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{-Peak (Note 1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25°C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25°C}
Symbol
V_CEO
V_CEV
V_EB
I_C
I_CM
P_D
Value
80
100
7.0
15
20
83
0.67
Unit
Vdc
Vdc
Vdc
Adc
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg -ā55 to
°C
150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Ambient}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for Soldering}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Purposes: 1/8″ from Case for 5 Seconds
R_qJC
R_qJA
T_L
1.5
°C/W
62.5 °C/W
275
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
http://onsemi.com
15 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
80 V, 83 W
MARKING
DIAGRAM
4
1
2
3
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A-09
TO-220AB
D4xVH10G
AYWW
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping
D44VH10
TO-220
50 Units/Rail
D44VH10G
TO-220
(Pb-Free)
50 Units/Rail
D45VH10
TO-220
50 Units/Rail
D45VH10G
TO-220
(Pb-Free)
50 Units/Rail
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
November, 2007 - Rev. 5
Publication Order Number:
D44VH/D