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D44VH Datasheet, PDF (1/4 Pages) ON Semiconductor – Complementary Silicon Power Transistors 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 VOLTS 83 WATTS
ON Semiconductort
Complementary Silicon Power
Transistors
These complementary silicon power transistors are designed for
high–speed switching applications, such as switching regulators and
high frequency inverters. The devices are also well–suited for drivers
for high power switching circuits.
• Fast Switching —
tf = 90 ns (Max)
• Key Parameters Specified @ 100_C
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Complementary Pairs Simplify Circuit Designs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ — Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Ambient
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (2) Pulse Width v 6.0 ms, Duty Cycle v 50%.
Symbol
VCEO
VCEV
VEB
IC
ICM
PD
TJ, Tstg
Symbol
RθJC
RθJA
TL
Value
80
100
7.0
15
20
83
0.67
–55 to 150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/_C
_C
Max
Unit
1.5
_C/W
62.5
_C/W
275
_C
NOTE: All polarities are shown for NPN transistors. For PNP transistors, reverse polarities.
NPN
D44VH
PNP
D45VH
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 VOLTS
83 WATTS
CASE 221A–09
TO–220AB
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 2
Publication Order Number:
D44VH/D