CPH6635 Datasheet, PDF (1/8 Pages) ON Semiconductor – Complementary Dual CPH6 Power MOSFET

Ordering number : ENA2166
CPH6635
Power MOSFET
30V, 0.4A, 3.7Ω, ^{–20V, –1.5A,} 280mΩ, Complementary Dual CPH6
http://onsemi.com
Features
• _{Excellent ON-resistance characteristic (P-Channel : RDS(on)1=215mΩ (typ.))}
• _{Optimal for load switch use (N-Channel for drive is embedded)}
• _{N-Channel : 1.5V drive, P-Channel : 1.8V drive}
• _{Halogen Free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
30
±10
0.4
1.6
0.8
150
--20
V
±10
V
--1.5
A
--6.0
A
W
°C
Tstg
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-007
2.9
654
Ordering & Package Information
Device
Package
Shipping
memo
CPH6635-TL-H
CPH6
SC-74, SOT-26, SOT-45
3,000
pcs./reel
Pb Free
and
Halogen Free
0.15
CPH6635-TL-H
Packing Type: TL
Marking
0.05
12
0.95
3
0.4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
CPH6
TL
Electrical Connection
6
5
4
1
2
3
Semiconductor Components Industries, LLC, 2013
June, 2013
61213 TKIM TC-00002929/10913 TKIM No. A2166-1/8