CPH6442 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

CPH6442
Power MOSFET
60V, 43mΩ, 6A, Single N-Channel
www.onsemi.com
Features
• 4V Drive
• Low On-Resistance
• ESD Diode-Protected Gate
• Pb-Free, and RoHS Compliance
• Halogen Free Compliance : CPH6442-TL-W
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
60
V
±20
V
6
A
24
A
1.6
W
150
°C
−55 to +150
°C
VDSS
60V
RDS(on) Max
43 mΩ@10V
59 mΩ@4.5V
65 mΩ@4V
ID _Max
6A
Electrical Connection
N-Channel
1, 2, 5, 6
3
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
4
6 : Drain
Packing Type : TL
Marking
Thermal Resistance Ratings
Parameter
Symbol
Value
Unit
TL
Junction to Ambient
When mounted on ceramic substrate
(900mm² × 0.8mm)
R_θJA
78.1
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 3
Publication Order Number :
CPH6442/D