CPH6355 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH6355
Power MOSFET
–30V, 169mΩ, –3A, Single P-Channel
www.onsemi.com
Features
• Low ON-Resistance
• 4V Drive
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
−3
A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
−12
A
Power Dissipation
When mounted on ceramic substrate
PD
(1500mm² × 0.8mm)
Junction Temperature
Tj
1.6
W
150
°C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1500mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
78.1
°C/W
VDSS
−30V
RDS(on) Max
169mΩ@ −10V
276mΩ@ −4.5V
313mΩ@ −4V
ID _Max
−3A
Electrical Connection
P-Channel
1, 2, 5, 6
1 : Drain
3
2 : Drain
3 : Gate
4 : Source
5 : Drain
4
6 : Drain
Packing Type : TL
Marking
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 3
Publication Order Number :
CPH6355/D