CPH6350 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1529B
CPH6350
P-Channel Power MOSFET
–30V, –6A, _{43mΩ, Single CPH6}
http://onsemi.com
Features
• _{4V drive}
• _{Low ON-resistance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--30
V
±20
V
--6
A
--24
A
1.6
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
12
0.95
3
0.4
Ordering & Package Information
Device
Package
Shipping
CPH6350-TL-E
CPH6
3,000pcs./
SC-74, SOT-26, SOT-457
reel
memo
Pb-Free
0.15
CPH6350-TL-E
CPH6350-TL-W
CPH6350-TL-W
CPH6
SC-74, SOT-26, SOT-457
3,000pcs./
reel
Pb-Free
and
Halogen Free
0.05
Packing Type: TL
Marking
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM/71112 TKIM TC-00002780/80509PE TKIM TC-00002052 No. A1529-1/6