CPH6347 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

CPH6347
Power MOSFET
–20V, 39mΩ, –6A, Single P-Channel
www.onsemi.com
Features
• Low Gate Drive Voltage
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS Compliance
VDSS
−20V
RDS(on) Max
39mΩ@ −4.5V
66mΩ@ −2.5V
102mΩ@ −1.8V
ID _Max
−6A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
−20
V
±12
V
−6
A
−24
A
1.6
W
150
°C
−55 to +150
°C
Value
Unit
78.1
°C/W
Electrical Connection
P-Channel
1, 2, 5, 6
1 : Drain
3
2 : Drain
3 : Gate
4 : Source
5 : Drain
4
6 : Drain
Packing Type : TL
Marking
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 2
Publication Order Number :
CPH6347/D