CPH6003A Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – High-frequency Medium-power Amplifier Applications

Ordering number : ENA1078A
CPH6003A
RF Transistor
12V, 150mA, fT=7GHz, NPN Single CPH6
http://onsemi.com
Features
• _{High gain (fT=7GHz typ)}
• _{High Current (IC=150mA)}
• _{Ultraminiature and thin 6pin package}
• _{Large Collector Disspation (800mW)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
12
V
2
V
150 mA
800 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-002
2.9
654
0.15 ^{CPH6003A-TL-E}
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.05
12
0.95
3
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
62712 TKIM/D2408ABMS IM TC-00001809 No. A1078-1/7