CPH6001A Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

Ordering number : ENA1079A
CPH6001A
RF Transistor
12V, 100mA, fT=6.7GHz, NPN Single CPH6
http://onsemi.com
Features
• _{High gain}
: |S21e|²=11dB typ (f=1GHz)
• _{High cut-off frequency : fT=6.7GHz typ}
• _{Small and slim 6-pin package}
• _{Large allowable collector dissipation (800mW max)}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm²Ã—0.8mm)
Ratings
Unit
20
V
12
V
2
V
100 mA
800 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-002
2.9
654
0.15 ^{CPH6001A-TL-E}
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
0.05
12
0.95
3
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
71112 TKIM/O2109AB TKIM TC-00002102 No. A1079-1/8