CPH5802 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – DC / DC Converter Applications

CPH5802
Ordering number : ENN6899
CPH5802
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Features
• _{Composite type with a P-Channel Sillicon MOSFET}
(MCH3306) and a Schottky Barrier Diode (SBS004)
contained in one package facilitating high-density
mounting.
[MOSFET]
• _{Low ON-resistance.}
• Ultrahigh-speed switching.
• Ultralow voltage drive (1.8V drive).
[SBD]
• Short reverse recovery time.
• Low forward voltage.
Package Dimensions
unit : mm
2171
2.9
543
[CPH5802]
0.15
0.05
1
0.95
2
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
0.4
SANYO : CPH5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QC
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (600mm²âœ•0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--20
V
±10
V
--2
A
--8
A
0.9
W
150
°C
--55 to +125
°C
15
V
15
V
1
A
10
A
--55 to +125
°C
--55 to +125
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com
Publication Order Number:
CPH5802/D